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integrated silicon solution, inc. ? 1-800-379-4774 1 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams features ? 1m x 36 or 2m x 18. on-chip delay-locked loop (dll) for wide data valid window. common i/o read and write ports. synchronous pipeline read with late write opera- tion. do uble data rate (ddr-ii) interface for read and write input ports. fixed 4-bit burst for read and write operations. clock stop support. two input clocks (k and k ) for address and con- trol registering at rising edges only. two input clocks (c and c ) for data output con- trol. two echo clocks (cq and cq ) that are delivered simultaneously with data. +1.8v core power supply and 1.5, 1.8v v ddq , used with 0.75, 0.9v v ref . hstl input and output levels. registered addresses, write and read controls, byte writes, and data outputs. full data coherency. boundary scan using limited set of jtag 1149.1 functions. byte write capability. fine ball grid array (fbga) package - 15mm x 17mm body size - 1mm pitch - 165-ball (11 x 15) array programmable impedance output drivers via 5x user-supplied precision resistor. description the 36mb is61ddb41m36 and is61ddb42m18 are synchronous, high-performance cmos static random access memory (sram) devices. these srams have a common i/o bus. the rising edge of k clock initiates the read/write operation, and all internal operations are self-timed. refer to the timing reference diagram for truth table on p.8 for a description of the basic operations of these ddr-ii (burst of 4) cio srams. rea d and write addresses are registered o n alter- nating rising edges of the k clock. reads and writes are performed in double data rate. the following are registered internally on the rising edge of the k clock: read and write addresses address load read/write enable byte writes for burst addresses 1 and 3 data-in for burst addresses 1 and 3 the following are registered on the rising edge of the k clock: byte writes for burst addresses 2 and 4 data-in for burst addresses 2 and 4 byte writes can change with the corresponding data- in to enable or disable writes on a per-byte basis. an internal write buffer enables the data-ins to be regis- tered one cycle later than the write address. the first data-in burst is clocked one cycle later than the write command signal, and the second burst is timed to the following rising edge of the k clock. two full clock cycles are required to complete a write opera- tion. during the burst read operation, at the first and third bursts the data-outs are updated from output regis- ters off the second and fourth rising edges of the c clock (starting 1.5 cycles later). at the second and fourth bursts, the data-outs are updated with the third and fifth rising edges of the corresponding c clock (see page 9). the k and k clocks are used to time the data-outs whenever the c and c clocks are tied high. two full clock cycles are required to complete a read operation the device is operated with a single +1.8v power supply and is compatible with hstl i/o interfaces. .
2 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams x36 fbga pinout (top view) 1234567891011 acq v ss /sa* sa r/w bw 2 k bw 1 ld sa v ss /sa* cq b nc dq27 dq18 sa bw 3 kbw 0 sa nc nc dq8 cnc ncdq28v ss sa sa 0 sa1 v ss nc dq17 dq7 dncdq29dq19v ss v ss v ss v ss v ss nc nc dq16 enc ncdq20v ddq v ss v ss v ss v ddq nc dq15 dq6 f nc dq30 dq21 v ddq v dd v ss v dd v ddq nc nc dq5 g nc dq31 dq22 v ddq v dd v ss v dd v ddq nc nc dq14 hdoff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq jnc ncdq32v ddq v dd v ss v dd v ddq nc dq13 dq4 knc ncdq23v ddq v dd v ss v dd v ddq nc dq12 dq3 l nc dq33 dq24 v ddq v ss v ss v ss v ddq nc nc dq2 mnc ncdq34v ss v ss v ss v ss v ss nc dq11 dq1 nncdq35dq25v ss sa sa sa v ss nc nc dq10 p nc nc dq26 sa sa c sa sa nc dq9 dq0 rtdotcksasasa c sa sa sa tms tdi the following pins are reserved for higher densities: 2a for 144mb, 10a for 72mb. bw 0 controls writes to dq0 ? dq8; bw 1 controls writes to dq9 ? dq17; bw 2 controls writes to dq18 ? dq26; bw 3 controls writes to dq27 ? dq35. x18 fbga pinout (top view) 1234567891011 acq v ss /sa* sa r/w bw 1 k nc/sa ld sa sa cq b nc dq9 nc sa nc/sa k bw 0 sa nc nc dq8 cnc nc nc v ss sa sa 0 sa 1 v ss nc dq7 nc dnc ncdq10v ss v ss v ss v ss v ss nc nc nc enc ncdq11v ddq v ss v ss v ss v ddq nc nc dq6 fncdq12ncv ddq v dd v ss v dd v ddq nc nc dq5 gnc ncdq13v ddq v dd v ss v dd v ddq nc nc nc hdoff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq jnc nc ncv ddq v dd v ss v dd v ddq nc dq4 nc knc ncdq14v ddq v dd v ss v dd v ddq nc nc dq3 lncdq15ncv ddq v ss v ss v ss v ddq nc nc dq2 mnc nc nc v ss v ss v ss v ss v ss nc dq1 nc nnc ncdq16v ss sa sa sa v ss nc nc nc p nc nc dq17 sa sa c sa sa nc nc dq0 rtdotcksasasa c sa sa sa tms tdi the following pin is reserved for higher densities: 2a for 72mb, 7a for 144mb, 5b for 288mb. bw 0 controls writes to dq0 ? dq8; bw 1 controls writes to dq9 ? dq17
integrated silicon solution, inc. ? 1-800-379-4774 3 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams pin description symbol pin number description k, k 6b, 6a input clock. c, c 6p, 6r input clock for output data control. cq, cq 11a, 1a output echo clock. doff 1h dll disable when low. sa 0, sa 1 6c, 7c burst count address inputs. sa 9a, 4b, 8b, 5c, 5n, 6n, 7n, 4p, 5p, 7p, 8p, 3r, 4r, 5r, 7r, 8r, 9r 1m x 36 address inputs. sa 3a, 9a, 4b, 8b, 5c, 5n, 6n, 7n, 4p, 5p, 7p, 8p, 3r, 4r, 5r, 7r, 8r, 9r 2m x 18 address inputs. dq0 ? dq8 dq9 ? dq17 dq18 ? dq26 dq27 ? dq35 11p, 11m, 11l, 11k, 11j, 11f, 11e, 11c, 11b 10p, 11n, 10m, 10k, 10j, 11g, 10e, 11d, 10c 3b, 3d, 3e, 3f, 3g, 3k, 3l, 3n, 3p 2b, 3c, 2d, 2f, 2g, 3j, 2l, 3m, 2n 1m x 36 dq pins dq0 ? dq8 dq9 ? dq17 11p, 10m, 11l, 11k, 10j, 11f, 11e, 10c, 11b 2b, 3d, 3e, 2f, 3g, 3k, 2l, 3n, 3p 2m x 18 dq pins r/w 4a read/write control. read when active high. ld 8a synchronizes load. loads new address when low. bw 0, bw 1, bw 2, bw 3 7b, 7a, 5a,5b 1m x 36 byte write control, active low. bw 0, bw 1 7b, 5a 2m x 18 byte write control, active low. v ref 2h, 10h input reference level. v dd 5f, 7f, 5g, 7g, 5h, 7h, 5j, 7j, 5k, 7k power supply. v ddq 4e,8e,4f,8f,4g,8g,3h,4h,8h,9h,4j,8j,4k,8k,4l,8l output power supply. v ss 2a, 10a, 4c, 8c, 4d, 5d, 6d, 7d, 8d, 5e, 6e, 7e, 6f, 6g, 6h, 6j, 6k, 5l, 6l, 7l, 4m, 8m, 4n, 8n power supply. zq 11h output driver impedance control. tms, tdi, tck 10r, 11r, 2r ieee 1149.1 test inputs (1.8v lvttl lev- els). tdo 1r ieee 1149.1 test output (1.8v lvttl level).
4 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams sram features read operations the sram operates continuously in a burst-of-four mode. read cycles are started by registering r/w in active high state at the rising edge of the k clock. r/w can be activated every other cycle because two full cycles are required to complete the burst-of-four read in ddr mode. a second set of clocks, c and c , are used to control the timing to the outputs. a set of free-running echo clocks, cq and cq , are produced inter- nally with timings identical to the data-outs. the echo clocks can be used as data capture clocks by the receiver device. when the c and c clocks are connected high, the k and k clocks assume the function of those clocks. in this case, the data corresponding to the first address is clocked 1.5 cycles later by the rising edge of the k clock. the data corresponding to the second burst is clocked 2 cycles later by the following rising edge of the k clock. the third data-out is clocked by the subsequent rising edge of the k clock, and the fourth data-out is clocked by the subsequent rising edge of the k clock. whenever ld is low, a new address is registered at the rising edge of the k clock. a nop operation (ld is high) does not terminate the previous read. the output drivers disable automatically to a high state. write operations write operations can also be initiated at every other rising edge of the k clock whenever r/w is low. the write address is also registered at that time. when the address needs to change, ld needs to be low simulta- neously to be registered by the rising edge of k. again, the write always occurs in bursts of four. block diagram 1m x 36 (2m x 18) memory array write/read decode sense amps write driver select output control data reg add reg & control logic clock gen output reg output select output driver 72 (or 36) 72 (or 36) 36 (or 18) dq (data-out cq, cq (echo clock out) address ld r/w bw x k k c c 4 (or 2) 18 (or 19) 18 (or 19) 36 (or 18) & data-in) a0, a1 burst control 36 (or 18)
integrated silicon solution, inc. ? 1-800-379-4774 5 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams the write data is provided in a ? late write ? mode; that is, the data-in corresponding to the first address of the burst, is presented 1 cycle later or at the rising edge of the following k clock. the data-in corresponding to the second write burst address follows next, registered by the rising edge of k . the third data-out is clocked by the subsequent rising edge of the k clock, and the fourth data-out is clocked by the subsequent rising edge of the k clock. the data-in provided for writing is initially kept in write buffers. the information on these buffers is written into the array on the third write cycle. a read cycle to the last two write address produces data from the write buffers. the sram maintains data coherency. during a write, the byte writes independently control which byte of any of the four burst addresses is written (see x18/x36 write truth tables on page 9 and timing reference diagram for truth table on page 8). whenever a write is disabled (r/w is high at the rising edge of k), data is not written into the memory. rq programmable impedance an external resistor, rq, must be connected between the zq pin on the sram and v ss to enable the sram to adjust its output driver impedance. the value of rq must be 5x the value of the intended line impedance driven by the sram. for example, an rq of 250 ? results in a driver impedance of 50 ? . the allowable range of rq to guarantee impedance matching is between 175 ? and 350 ? , with the tolerance described in programmable impedance output driver dc electrical characteristics on page 15. the rq resistor should be placed less than two inches away from the zq ball on the sram module. the capacitance of the loaded zq trace must be less than 3 pf. the zq pin can also be directly connected to v ddq to obtain a minimum impedance setting. zq must never be connected to v ss . programmable impedance and power-up requirements periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in supply voltage and temperature. at power-up, the driver impedance is in the middle of allowable impedances values. the final impedance value is achieved within 1024 clock cycles. clock consideration this device uses an internal dll for maximum output data valid window. it can be placed in a stopped-clock mode to minimize power and requires only 1024 cycles to restart. no clocks can be issued until v dd reaches its allowable operating range. single clock mode this device can be also operated in single-clock mode. in this case, c and c are both connected high at power-up and must never change. under this condition, k and k control the output timings. either clock pair must have both polarities switching and must never connect to v ref , as they are not differ- ential clocks.
6 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams depth expansion the following figure depicts an implementation of four 2m x 18 ddr-ii srams with common i/os . in this appli- cation example, the second pair of c and c clocks is delayed such that the return data meets the data setup and hold times at the bus master. power-up and power-down sequences the power supplies must be powered up in the following order: 1. v dd 2. v ddq 3. v ref 4. inputs the power-down sequence must be the reverse. v ddq can be allowed to exceed v dd by no more than 0.6v. application example 2m x 18 sa ld r/w bw 0 bw 1 cc kk dq 0 ? 17 zq sram #4 r=250 ? vt data-in/data-out address 0 ? 79 ld r/w bw 0 ? 7 memory controller return clk source clk return clk source clk sa ld r/w bw 0 bw 1 cc kk dq 0 ? 17 zq sram #1 r=250 ? vt r vt vt r=50 ? vt=v ref r 0 ? 71
integrated silicon solution, inc. ? 1-800-379-4774 7 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams the timing reference diagram for truth table on page 8 is helpful i n understan ding the clock and write truth tables, as it shows the cycle relationship between clocks, address, data-in, data-out, and controls. all read and write commands are issued at the beginning of cycles t and t w , respectively. state diagram linear burst sequence table burst sequence case 1 case 2 case 3 case 4 sa 1 sa 0 sa 1 sa 0 sa 1 sa 0 sa 1 sa 0 first address 00011011 second address 01101100 third address 10110001 fourth address 11000110 power up ddr-ii write nop ddr-ii read write write notes: 1. internal burst counter is fixed as four-bit linear; that is, when first address is a0+0, next internal burst address is a0+ 1. 2. read refers to read active status with r/w = high. 4. load refers to read new address active status with ld = low. 3. write refers to write active status with r/w = low. load new address load load read load load load 5. load is read new address inactive status with ld = high. increment increment always always write read read address write address dcount = 1 dcount = 1 dcount = 0 dcount = 2 load dcount = 2 dcount = dcount + 1 dcount = dcount + 1
8 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams timing reference diagram for truth table clock truth table (use the following table with the timing reference diagram for truth table .) mode clock controls data out / data in kld tt+1t+2t w a q a q a+1 k clock k clock ld clock cycle t w+1 d b d b+1 nop read a b write b t w+2 d b+2 d b+3 clock ld r / w bw 0,1,2,3 address data-in/out (dq) c clock c tt+1t+2t w a q a q a+1 k clock k bw 0,1,2,3 address data-in/out (dq) c clock c b write b tt+1t+2t w a q a q a+1 k clock k 0,1,2,3 address data-in/out (dq) c clock c t w+1 d b d b+1 nop read a t w+2 d b+2 d b+3 q a+2 q a+3 0,1,2,3 address data-in/out (dq) c clock c clock cq clock cq clock cycle timing reference diagram for truth table clock truth table (use the following table with the timing reference diagram for truth table .) mode clock controls data out / data in kld r/w q a / d b q a+1 / d b+1 q a+2 / d b+2 q a+3 / d b+3 stop clock stop x x previous state previous state previous state previous state no operation (nop) l h h h high-z high-z high-z high-z read b l h lh dout at c (t + 1.5) dout at c (t + 2) dout at c (t + 2.5) dout at c (t + 3) write a l hl l d b (t w + 1) d b (t w + 1.5) d b (t w + 2) d b (t w + 2.5) notes : 1. the internal burst counter is always fixed as two-bit. 2. x = don ? t care; h = logic ? 1 ? ; l = logic ? 0 ? . 3. a read operation is started when control signal r/w is active high. 4. a write operation is started when control signal r/w is active low. 5. before entering into the stop clock, all pending read and write commands must be completed. 6. for timing definitions, refer to the a c characteristics on page 16. signals must have ac specifications at timings indicated in parenthesis with respect to switching clocks k, k , c, and c .
integrated silicon solution, inc. ? 1-800-379-4774 9 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams x36 write truth table use the following table with the timing reference diagram for truth table on page 8. operation k (t w +1) k (t w +1.5) k (t w +2) k (t w +2.5) bw 0 bw 1 bw 2 bw 3 d b d b+1 d b+2 d b+3 write byte 0 l hlhhh d0-8 (t w +1) write byte 1 l hhlhh d9-17 (t w +1) write byte 2 l hhhlh d18-26 (t w +1) write byte 3 l hhhhl d27-35 (t w +1) write all bytes l hllll d0-35 (t w +1) abort write l hhhhhdon ? t care write byte 0 l hlhhh d0-8 (t w +1.5) write byte 1 l hhlhh d9-17 (t w +1.5) write byte 2 l hhhlh d18-26 (t w +1.5) write byte 3 l hhhhl d27-35 (t w +1.5) write all bytes l hllll d0-35 (t w +1.5) abort write l hhhhhdon ? t care write byte 0 l hlhhh d0-8 (t w +2) write byte 1 l hhlhh d9-17 (t w +2) write byte 2 l hhhlh d18-26 (t w +2) write byte 3 l hhhhl d27-35 (t w +2) write all bytes l hllll d0-35 (t w +2) abort write l hhhhh don ? t care write byte 0 l hl h h h d0-8 (t w +2.5) write byte 1 l hh l h h d9-17 (t w +2.5) write byte 2 l hh h l h d18-26 (t w +2.5) write byte 3 l hh h h l d27-35 (t w +2.5) write all bytes l hl l l l d0-35 (t w +2.5) abort write l hh h h h don ? t care notes ; 1. for all cases, r/w needs to be active low during the rising edge of k occurring at time t w 2. for timing definitions refer to the ac characteristics on page 16. signals must have ac specifications with respect to s witching clocks k and k.
10 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams x18 write truth table use the following table with the timing reference diagram for truth table on page 8. operation k (t w +1) k (t w +1.5) k (t w +2) k (t w +2.5) bw 0 bw 1 d b d b+1 d b+2 d b+3 write byte 0 l hlh d0-8 (t w +1 ) write byte 1 l hhl d9-17 (t w +1 ) abort write l h hhdon ? t care write byte 0 l hlh d0-8 (t w +1.5 ) write byte 1 l hhl d9-17 (t w +1.5 ) write all bytes l hll d0- 17 (t w +1.5 ) abort write l h hh don ? t care write byte 0 l hlh d0-8 (t w +2 ) write byte 1 l hhl d9-17 (t w +2 ) write all bytes l h ll d0- 17 (t w +2 ) abort write l hhh don ? t care write byte 0 l hl h d0-8 (t w +2.5 ) write byte 1 l h hl d9-17 (t w +2.5 ) write all bytes l h ll d0- 17 (t w +2.5 ) abort write l hh h don ? t care notes ; 1. for all cases, r/w needs to be active low during the rising edge of k occurring at time t w 2. for timing definitions refer to the ac characteristics on page 16. signals must have ac specifications with respect to s witching clocks k and k.
integrated silicon solution, inc. ? 1-800-379-4774 11 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams absolute maximum ratings item symbol rating units power supply voltage v dd -0.5 to 2.6 v output power supply voltage v ddq -0.5 to 2.6 v input voltage v in -0.5 to 2.6 v data out voltage v dout -0.5 to 2.6 v operating temperature t a 0 to 70 c junction temperature t j 110 c storage temperature t stg -55 to +125 c note: stresses greater than those listed in this table can cause permanent damage to the device. this is a stress rating only and fun c- tional operation of the device at these or any other conditions above those indicated in the operational sections of this datas heet is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability.
12 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams recommended dc operating conditions (t a = 0 to + 70 c) parameter symbol minimum typical maximum units notes supply voltage v dd 1.8 - 5% 1.8 + 5% v 1 output driver supply voltage v ddq 1.4 1.9 v 1 input high voltage v ih v ref +0.1 v ddq + 0.2 v 1, 2 input low voltage v il -0.2 v ref - 0.1 v 1, 3 input reference voltage v ref 0.68 0.95 v 1, 5 clocks signal voltage v in - clk -0.2 v ddq + 0.2 v 1, 4 1. all voltages are referenced to v ss . all v dd , v ddq , and v ss pins must be connected. 2. v ih (max) ac = see 0vershoot and undershoot timings . 3. v il (min) ac = see 0vershoot and undershoot timings . 4. v in-clk specifies the maximum allowable dc excursions of each clock (k, k , c, and c ). 5. peak-to-peak ac component superimposed on v ref may not exceed 5% of v ref. 0vershoot and undershoot timings pbga thermal characteristics item symbol rating units thermal resistance junction to ambient (airflow = 1m/s) r ja tbd c/w thermal resistance junction to case r jc tbd c/w thermal resistance junction to pins r jb tbd c/w v ddq 20% min cycle time v ddq +0.6v gnd-0.6v gnd 20% min cycle time overshoot timing undershoot timing v ih (max) ac v il (min) ac
integrated silicon solution, inc. ? 1-800-379-4774 13 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams c a pa cit a nce (t a = 0 to + 70 o c, v dd = 1. 8 v -5 %, +5 %, f = 1 m h z) p a ram e t e r s ymb o l t es t condit i on m a ximum u nit s input ca pacit anc e c in v in = 0v 4 p f d a t a -in/o u t capacitance (dq 0 ? dq 35) c c dq v di n = 0v 4 p f c l oc ks capacitance (k, k , c , c) cl k v cl k = 0v 4 p f d c el ec tri cal c h ara c t e ri st ics (t a = 0 to + 70 o c, v dd = 1 . 8v -5%, +5 %) p arameter s ym bol m i n i mum m a x im um units n otes x 36 av erage power supply operati ng cur r ent (i ou t = 0, v in = v ih or v il ) i dd 30 i dd 40 i dd 50 i dd 30 i dd 40 i dd 50 ? ? ? ma 1 x 18 av erage power supply operati ng cur r ent (i ou t = 0, v in = v ih or v il ) ? ? ? ma 1 p o wer supply standby curr ent (r = v ih , w = v ih . a l l ot her input s = v ih or v ih , i ih = 0) i sb ss ? 20 0 m a 1 input leakage cur r ent , an y input ( except j t a g ) (v in = v ss or v dd ) i li -2 + 2 o utput leakage curr ent (v ou t = v ss or v dd q , q in high- z) i lo -5 + 5 ua ua ua o u tput ? high ? level v o lt age (i oh = - 6 m a ) v oh v dd q v dd q o u tput ? low ? level v o lt age (i ol = +6m a ) v ol v ss v ss v v j t a g leaka ge cu rrent (v in = v ss or v dd ) i li j t a g 1. i ou t = c hip output curr ent . 2. m inim um im pedance output dr iv er . 3. j e de c s t anda rd j e s d 8-6 c l as s 1 com pati b le . 4. f o r jt a g input s only . 5. c urrents ar e es t imates only and need to be v er i fied. 600 550 500 600 550 500 2, 3 2, 3 4 -0.4 +0.4 -100 +100
14 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams typical ac input characteristics item symbol minimum maximum notes ac input logic high v ih (ac) v ref + 0.4 1, 2, 3, 4 ac input logic low v il (ac) v ref - 0.4 1, 2, 3, 4 clock input logic high (k, k , c, c) v ih-clk (ac) v ref + 0.4 1, 2, 3 clock input logic low (k, k , c, c) v il-clk (ac) v ref - 0.4 1, 2, 3 1. the peak-to-peak ac component superimposed on v ref may not exceed 5% of the dc component of v ref . 2. performance is a function of v ih and v il levels to clock inputs. 3. see the ac input definition diagram. 4. see the ac input definition diagram. the signals should swing monotonically with no steps rail-to-rail with input signals never ring- ing back past vih (ac) and vil (ac) during the input setup and input hold window. vih (ac) and vil (ac) are used for timing pur - poses only. ac input definition programmable impedance output driver dc electrical characteristics (t a = 0 to +70 c, v dd = 1.8v -5%, +5%, v ddq = 1.5, 1.8v) parameter symbol minimum maximum units notes output ? high ? level voltage v oh v ddq / 2 v ddq v1, 3 output ? low ? level voltage v ol v ss v ddq / 2 v 2, 3 1. i oh = 15% @ v oh = v ddq / 2 for: 175 ? rq 350 ? . 2. i ol = 15% @ v ol = v ddq / 2 for: 175 ? rq 350 ? . 3. parameter tested with rq = 250 ? and v ddq = 1.5v. v ih (ac) v ref v il (ac) setup time hold time v ref k k v rail v -rail vddq 2 ------------------ ?? ?? rq 5 -------- ? ? ? ? ? vddq 2 ------------------ ?? ?? rq 5 -------- ? ? ? ? ?
integrated silicon solution, inc. ? 1-800-379-4774 15 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams ac test conditions (t a = 0 to + 70 c, v dd = 1.8v -5%, +5%, v ddq = 1.5, 1.8v) parameter symbol conditions units notes output driver supply voltage v ddq 1.5, 1.8 v input high level v ih v ref +0.5 v input low level v il v ref -0.5 v input reference voltage v ref 0.75, 0.9 v input rise time t r 0.35 ns input fall time t f 0.35 ns output timing reference level v ref v clocks reference level v ref v output load conditions 1, 2 1. see ac test loading . 2. parameter tested with rq = 250 ? and v ddq = 1.5v. ac test loading q 50 ? 50 ? 5pf 0.75, 0.9v 0.75, 0.9v test comparator
16 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams a c c h ara c t e r i st ic s (t a = 0 to + 70 o c, v dd = 1 . 8 v -5 %, + 5 %) p a r a m e ter s ym bol 30 (333m hz) unit s n ot es m i n m ax cl o c k c y c l e ti m e ( k , k , c, c )t kh kh 3 . 0 3 . 6 ns c l oc k phase j i tt er (k , k , c, c )t kc - v ar 0.12 ns c l oc k hi gh pulse (k, k , c , c )t kh kl 1 . 2 ns c l oc k l ow pulse (k, k , c , c )t kl kh 1 . 2 ns c l oc k t o clock (k h >k h , c h >c h )t kh k h 1 . 3 n s c l oc k t o dat a clock (k h >c h , k h >c h )t kh ch 0 . 0 1. 3 ns d ll lock (k , c) t kc - lo c k 1024 cyc le k s t atic to dll re set t kc - re se t 30 cyc le out put time s c, c high t o out pu t vali d t ch qv 0.27 ns 1, 3 c, c high t o out pu t hol d t ch qx - 0.27 n s 1 , 3 c, c high t o echo clock valid t chc qv 0.25 ns 3 c, c high t o echo clock hold t chc qx - 0.25 ns 3 cq , cq high to o u t put v a l i d t cq h q v 0.27 ns 1, 3 cq , cq high to o u t put hold t cq h q x - 0.27 n s 1 , 3 c high t o out put high- z t ch qz 0.27 ns 1, 3 c high t o out put low- z t ch qx 1 - 0.27 n s 1 , 3 se t up ti m e s a ddres s v a li d t o k, k r i s ing edge t av k h 0.33 ? ns 2 c ont rol input s valid t o k rising edge t iv k h 0.33 ? ns 2 d a ta - i n v a l i d t o k , k rising edge t dv k h 0.30 ? ns 2 h o ld ti me s k r i s i n g edge t o addres s h o l d t kh ax 0.33 ? ns 2 k r i s i n g edge t o control inputs hold t kh i x 0.33 ? ns 2 k, k rising edge to da t a-in hold t kh dx 0.30 ? ns 2 1. s ee a c t e s t loading on page 15 . 2. d ur ing nor m al operat ion, v ih , v il , t ri se , and t fa l l of inputs mus t be within 20% of v ih , v il , t ri s e , and t fa l l of cloc k. 3. if c , c are t i ed hi gh, t hen k, k becom e the re f e renc es f o r c , c t iming par am eters .
integrated silicon solution, inc. ? 1-800-379-4774 17 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams a c c h ara c t e r i st ic s (t a = 0 to + 70 o c, v dd = 1 . 8 v -5 %, + 5 %) p a r a m e ter s ym bol 40 (250m hz) 50 (200mh z ) units not es min m a x min m ax cl o c k c y c l e ti m e ( k , k , c, c )t kh kh 4.0 5 .85 5 . 0 6.3 n s c l oc k phase j i tt er (k , k , c, c )t kc - v ar 0. 2 0 .2 ns c l oc k hi gh pulse (k, k , c , c )t kh kl 1.6 2 . 0 ns c l oc k l ow pulse (k, k , c , c )t kl kh 1.6 2 . 0 ns c l oc k t o clock (k h >k h , c h >c h )t kh k h 1.8 2 . 2 n s c l oc k t o dat a clock (k h >c h , k h >c h )t kh ch 0.0 1 . 8 0. 0 2 .3 n s d ll lock (k , c) t kc - lo c k 1 024 1024 c ycle k s t atic to dll re set t kc - re se t 30 30 c ycle out put time s c, c high t o out put vali d t ch qv 0.35 0. 38 ns 1, 3 c, c high t o out put hol d t ch qx -0. 35 - 0 . 38 ns 1, 3 c, c high t o echo clock valid t chc qv 0.33 0. 36 ns 3 c, c high t o echo clock hold t chc qx -0. 3 3 - 0 . 36 ns 3 cq , cq high to out put v a l i d t cq h q v 0.35 0. 36 ns 1, 3 cq , cq high to o u t put hold t cq h q x -0. 35 - 0 . 36 ns 1, 3 c high t o out put high- z t ch qz 0.35 0. 38 ns 1, 3 c high t o out put low- z t ch qx 1 -0. 35 - 0 . 38 ns 1, 3 se t up ti m e s a ddres s v a li d t o k, k r i s ing edge t av k h 0.4 ? 0. 5 ? n s 2 c ont rol input s valid t o k rising edge t iv k h 0.4 ? 0. 5 ? n s 2 d a ta - i n v a l i d t o k , k rising edge t dv k h 0. 35 ? 0. 4 ? n s 2 h o ld ti me s k r i s i n g edge t o addres s h o l d t kh ax 0.4 ? 0. 5 ? n s 2 k r i s i n g edge t o control input s hold t kh i x 0.4 ? 0. 5 ? n s 2 k, k rising edge to da t a-in hold t kh dx 0. 35 ? 0. 4 ? n s 2 1. s ee a c t e s t loading on page 15 . 2. d ur ing nor m al operat ion, v ih , v il , t ri se , and t fa l l of inputs mus t be within 20% of v ih , v il , t ri s e , and t fa l l of cloc k. 3. if c , c are t i ed hi gh, t hen k, k becom e the re f e renc es f o r c , c t iming par am eters .
18 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams read, write, and nop timing diagram t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh t klkh t khkh t khkl nop read (burst of 4) 123456789101112 nop read (burst of 4) a0 a1 a2 a3 nop (note 3) read (burst of 4) write (burst of 4) q01 q03 q11 q13 q14 q12 q04 q02 d21 d24 d23 d22 q31 q33 q32 k k t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh t klkh t khkh t khkl nop read (burst of 4) 123456789101112 nop read (burst of 4) a0 a1 a2 a3 nop (note 3) read (burst of 4) write (burst of 4) q01 q03 q11 q13 q14 q12 q04 q02 d21 d24 d23 d22 q31 q33 q32 k k t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh t klkh t khkh t khkl nop read (burst of 4) 123456789101112 nop read (burst of 4) a0 a1 a2 a3 nop (note 3) read (burst of 4) write (burst of 4) q01 q03 q11 q13 q14 q12 q04 q02 d21 d24 d23 d22 q31 q33 q32 k k ld t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh ld r/w t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh t klkh t khkh t khkl nop read (burst of 4) 123456789101112 nop read (burst of 4) a0 a1 a2 a3 nop (note 3) read (burst of 4) write (burst of 4) q01 q03 q11 q13 q14 q12 q04 q02 d21 d24 d23 d22 q31 q33 q32 k k r/w sa dq c c t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh t klkh t khkh t khkl nop read (burst of 4) 123456789101112 nop read (burst of 4) a0 a1 a2 a3 nop (note 3) read (burst of 4) write (burst of 4) q01 q03 q11 q13 q14 q12 q04 q02 d21 d24 d23 d22 q31 q33 q32 k k sa dq c c t chqv t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh sa dq c c t chqv t cqhqz t cqhqx t cqhqv t chcqh t khkh t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh sa dq c c t cqhqz t cqhqx t cqhqv t chcqh t khkh t klkh t khkl t khkh t chqz t chqx t chqx t chqv t khch t khdx t dvkh t khax t avkh t khix t ivkh t khkh cq cq t cqhqz t cqhqx t cqhqv t chcqh t khkh cq cq don ? t care undefined notes: 1. q01 refers to the output from address a. q02 refers to the output from the next internal burst address following a. 2. outputs are disabled (high impedance) one clock cycle after a nop. 3. the second nop cycle is not necessary for correct device operation, however, at high clock frequencies, it might be required to prevent bus contention.
integrated silicon solution, inc. ? 1-800-379-4774 19 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams ieee 1149.1 tap and boundary scan the sram provides a limited set of jtag functions to test the interconnection between sram i/os and printed circuit board traces or other components. there is no multiplexer in the path from i/o pins to the ram core. in conformance with ieee standard 1149.1, the sram contains a tap controller, instruction register, boundary scan register, bypass register, and id register. the tap controller has a standard 16-state machine that resets internally on power-up. therefore, a trst signal is not required. signal list tck: test clock tms: test mode select tdi: test data-in tdo: test data-out jtag dc operating characteristics (t a = 0 to + 70 c) operates with jedec standard 8-5 (1.8v) logic signal levels parameter symbol minimum typical maximum units notes jtag input high voltage v ih1 1.3 ? v dd +0.3 v 1 jtag input low voltage v il1 -0.3 ? 0.5 v 1 jtag output high level v oh1 v dd -0.4 ? v dd v1, 2 jtag output low level v ol1 v ss ? 0.4 v 1, 3 1. all jtag inputs and outputs are lvttl-compatible. 2. i oh1 -|2ma| 3. i ol1 +|2ma|. jtag ac test conditions (t a = 0 to + 70 c, v dd = 1.8v -5%, +5%) parameter symbol conditions units input pulse high level v ih1 1.3 v input pulse low level v il1 0.5 v input rise time t r1 1.0 ns input fall time t f1 1.0 ns input and output timing reference level 0.9 v
20 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams jtag ac characteristics (t a = 0 to + 70 c, v dd = 1.8v -5%, +5%) parameter symbol minimum maximum units notes tck cycle time t thth 20 ? ns tck high pulse width t thtl 7 ? ns tck low pulse width t tlth 7 ? ns tms setup t mvth 4 ? ns tms hold t thmx 4 ? ns tdi setup t dvth 4 ? ns tdi hold t thdx 4 ? ns tck low to valid data t tlov ? 7ns1 1. see ac te st loading on page 15. jtag timing diagram tck tms tdi tdo t thtl t tlth t thth t thmx t thdx t tlov t mvth t dvth
integrated silicon solution, inc. ? 1-800-379-4774 21 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams scan register definition register name bit size x18 or x36 instruction 3 bypass 1 id 32 boundary scan 109 id register definition part field bit number and description revision number (31:29) part configuration (28:12) jedec code (11:1) start bit (0) 2m x 18 000 00def0wx0t0q0b0s0 000 101 001 00 1 1m x 36 000 00def0wx0t0q0b0s0 000 101 001 00 1 part configuration definition : def = 010 for 36mb wx = 11 for x36, 10 for x18 t = 1 for dll, 0 for non-dll q = 1 for quadb4, 0 for ddr-ii b = 1 for burst of 4, 0 for burst of 2 s = 1 for separate i/0, 0 for common i/o
22 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams list of ieee 1149.1 standard violations 7.2.1.b, e 7.7.1.a-f 10.1.1.b, e 10.7.1.a-d 6.1.1.d instruction set code instruction tdo output notes 000 extest boundary scan register 2,6 001 idcode 32-bit identification register 010 sample-z boundary scan register 1, 2 011 private do not use 5 100 sample boundary scan register 4 101 private do not use 5 110 private do not use 5 111 bypass bypass register 3 1. places qs in high-z in order to sample all input data, regardless of other sram inputs. 2. tdi is sampled as an input to the first id register to allow for the serial shift of the external tdi data. 3. bypass register is initiated to v ss when bypass instruction is invoked. the bypass register also holds the last serially loaded tdi when exiting the shift-dr state. 4. sample instruction does not place dqs in high-z. 5. this instruction is reserved. invoking this instruction will cause improper sram functionality. 6. this extest is not ieee 1149.1-compliant. by default, it places q in high-z. if the internal register on the scan chain is se t high, q will be updated with information loaded via a previous sample instruction. the actual transfer occurs during the update ir state after extest is loaded. the value of the internal register can be changed during sample and extest only. jtag block diagram bypass register (1 bit) identification register (32 bits) instruction register (3 bits) tap controller control signals tdi tms tck tdo
integrated silicon solution, inc. ? 1-800-379-4774 23 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams tap controller state machine test logic reset run test idle select dr capture dr shift dr exit1 dr pause dr exit2 dr update dr select ir capture ir shift ir exit1 ir pause ir exit2 ir update ir 1 1 1 0 0 0 0 1 0 1 1 0 1 1 1 0 0 1 1 1 0 1 0 0 0 1 1 0 0 0 0 1
24 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams boundary scan exit order the same length is used for x18 and x36 i/o configuration. order pin id order pin id order pin id 1 6r 37 10d 73 2c 2 6p 379e 743e 3 6n 39 10c 75 2d 4 7p 40 11d 76 2e 57n419c771e 67r429d782f 7 8r 43 11b 79 3f 8 8p 44 11c 80 1g 99r 459b 811f 10 11p 46 10b 82 3g 11 10p 47 11a 83 2g 12 10n 48 10a 84 1h 13 9p 49 9a 85 1j 14 10m 50 8b 86 2j 15 11n 51 7c 87 3k 16 9m 52 6c 88 3j 17 9n 53 8a 89 2k 18 11l 54 7a 90 1k 19 11m 55 7b 91 2l 20 9l 56 6b 92 3l 21 10l 57 6a 93 1m 22 11k 58 5b 94 1l 23 10k 59 5a 95 3n 24 9j 60 4a 96 3m 25 9k 61 5c 97 1n 26 10j 62 4b 98 2m 27 11j 63 3a 99 3p 28 11h 64 2a 100 2n 29 10g 65 1a 101 2p 30 9g 66 2b 102 1p 31 11f 67 3b 103 3r 32 11g 68 1c 104 4r 33 9f 69 1b 105 4p 34 10f 70 3d 106 5p 35 11e 71 3c 107 5n 36 10e 72 1d 108 5r 109 internal 1) nc pins as defined on fbga pinouts on page 2 are read as ? don ? t cares ? . 2) state of internal pin (#109) is loaded via jtag.
integrated silicon solution, inc. ? 1-800-379-4774 25 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams 11 x 15 fbga dimensions
26 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 07/09/04 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 4) cio synchronous srams ordering information commercial range: 0c to +70c speed order p art no. organization package 250 mhz IS61DDB41M36-250M3 1mx36 165 bga is61ddb42m18-250m3 2mx18 165 bga

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